The following papers appear in the June 2009 (Vol. 17/6) issue of JSID.
For a preview of the papers go to sid.org/jsid.html.
Asymmetric source/drain offset structure for reduced leakage current in polycrystalline-silicon thin-film transistors (pages 501–505)
Won-Kyu Lee, et al., Seoul National University, Korea
Orange-red upconversion luminescence of Sm3+-doped ZnO–B2O3–SiO2 glass by infrared femtosecond laser irradiation (pages 507–510)
Songmin Zhang, et al., Zhejiang University, P. R. China
Transflective IPS-LCD with improved reflective contrast ratio (pages 513–518)
Kenichi Mori, et al., NEC LCD Technologies, Japan
ITO lift-off technique for TFT mask-reduction process (pages 519–523)
Kuo-Lung Fang, Lextar Electronics Corp., Japan; Han-Tu Lin and Chien-Hung Chen, AU Optronics Corp., Taiwan
a-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit simulation (pages 525–534)
Charlene Chen and Jerzy Kanicki, The University of Michigan, USA; Katsumi Abe and Hideya Kumomi, Canon Research Center, Japan
Scintillator-based flat-panel x-ray imaging detectors (pages 535–542)
Paul R. Granfors, G.E. Healthcare, USA; Douglas Albagli, G.E. Global Research Center, USA
Photoconductor-based (direct) large-area x-ray imagers (pages 543–550)
George Zentai, Varian Medical Systems, USA